Radiation-induced single event transients modeling and testing on nanometric flash-based technologies》.pdf

Microelectronics Reliability 55 (2015) 2087–2091 Contents lists available at ScienceDirect Microelectronics Reliability j ournal homepage: www.el sevier.c om/l ocate/ mr Radiation-induced single event transients modeling and testing on nanometric flash-based technologies L. Sterpone a,⁎, B. Du a, S. Azimi b a Dipartimento di Automatica e Informatica, Politecnico di Torino, Torino, Italy b Noshirvari University of Technology, Babol, Iran a r t i c l e i n f o a b s t r a c t Article history: The increasing technology node scaling makes VLSI devices extremely vulnerable to Single Event Effects (SEEs) Received 27 May 2015 induced by highly charged particles such as heavy ions, increasing the sensitivity to Single Event Transients Received in revised form 15 July 2015 (SETs). In this paper, we describe a new methodology combining an analytical and oriented model for analyzing Accepted 15 July 2015 the sensitivity of SET nanometric technologies. The paper includes radiation test experiments performed on Available online 21 August 2015 Flash-based FPGAs using heavy ions radiation beam. Experimental results are detailed and commented demon- Keywords: strating the effective mitigation capabilities thanks to the adoption of the developed model. Nanometric © 2015 Elsevier Ltd. All rights reserved