《一种新型优化热载流子退化效应的 SOI-LIGBT.》.pdfVIP

JournalofSoutheastUniversity(EnglishEdition) Vo1．30，No．1，PP．17～21 Mar．2014 ISSN 1003--7985 Novellateralinsulatedgatebipolartransistor0n SOIsubstrate tnor oot·i●m i●zi●na l11ot-carri●er d1egradat·i●on HuangTingting LiuSiyang SunW eifeng ZhangChunwei (NationalASICSystemEngineeringResearchCenter，SoutheastUniversity，Nanjing210096，China) Abstract：A novellateralinsulatedgatebipolartransistoron a hot—carrieref_fectfHCE)becomesserious．So．thehot． silicon—on—insulator substrate fS0I—LIGBT1 with a special carrierdegradation oftheSOI．LIGBT devicesisoneof low—dopedP—wellstructureisproposed．n leP—wellstructure themostimportnatreliability issuesinICs． isadded to attach hte P—body under hte channel， so as to TheHC reliabilityofhteSOI．LIGBT devicesisbecom． reducethelinearanodecurrentdegradationwithoutadditional ingmorenadmore important，buthtein—depht studyon process．111einfluenceofthelength nad depth oftheP—well thehot．carrierdegradationmechna ism oftheSOI．LIGBT on hte hot—carrier (HC1 reliabi1itv of hte SOI．U GBT is devicesislessdocumented due to the complexity ofits studied．W ith hte increase in hte1ength ofthe P—wel1．the twokindsofcarriers．Recently， to ourknowledge，no perpendicularelectricfieldpeakandtheimpactionizationpeka studieshavebeenfocusedonhtestructureoptimizationof diminish， resulting in hte reduction of hte hot—carrier thesedevicestodecreasehtehot—carrierdegradation ． degradation． In addition． hte impact ionization will be InthisPaper，toreducehteelectricfieldnadthedegra— wekaenedwiht hteincreaseinhtedepht ofhteP—well，which