《低速包晶反应三相区重熔与凝固界面的稳定性(英文版)》.pdfVIP

《低速包晶反应三相区重熔与凝固界面的稳定性(英文版)》.pdf

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Trans. Nonferrous Met. Soc. China 24(2014) 1951−1958 Stability of remelting and solidification interfaces of triple-phase region during peritectic reaction at lower speed 1,2 1 1 1 1 1 1 Shu-jie WANG , Liang WANG , Liang-shun LUO , Yan-qing SU , Fu-yu DONG , Jing-jie GUO , Heng-zhi FU 1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China; 2. Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China Received 25 March 2013; accepted 16 March 2014 Abstract: Peritectic reaction was studied by directional solidification of Cu−Ge alloys. A larger triple junction region of peritectic reaction was used to analyze the interface stability of the triple junction region during peritectic reaction. Under different growth conditions and compositions, different growth morphologies of triple junction region are presented. For the hypoperitectic Cu−13.5%Ge alloy, as the pulling velocity (v) increases from 2 to 5 μm/s, the morphological instability of the peritectic phase occurs during the peritectic reaction and the remelting interface of the primary phase is relatively stable. However, for the hyperperitectic Cu−15.6%Ge alloy with v=5 μm/s, the nonplanar remelting interface near the trijunction is presented. The morphological stabilities of the solidifying peritectic phase and the remelting primary phase are analyzed in terms of the constitutional undercooling criterion. Key words: peritectic reaction; Cu−Ge alloys; directional solidification; microstructure; constitutional undercooling

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