光电技术4.pptVIP

Chapter 4 Photoelectric Effects  第四章 光电效应 §4.1 The photoconductive effect 光电导效应 §4.2 p-n junctions and the photovoltaic effect p-n结及光伏效应 §4.3 The photoemissive effect 光电发射效应 §4.1 The photoconductive effect 光电导效应 photoconductivity: In certain materials, the increase in electrical conductivity that results from increases in the number of free carriers generated when photons are absorbed. The photons must have quantum energy sufficient to overcome the band-gap in the material in question. 光照变化引起半导体材料电导变化的现象称光电导效应 Mf=constant §4.2 p-n junctions and the photovoltaic effect  p-n结及光伏效应 A voltage can be generated across a p-n junction under the illumination of light /wiki Formation of p-n junction Separate p-type and n-type semiconductors Ions, electrons, holes 2 Energy band of p-n junction and built-in potential (contact potential) Built-in potential as a function of doping concentration for an abrupt p+n or n+p junction 3 The built-in electric field distribution Junction capacitance 5 Current-voltage characteristics of the p-n junction /wiki §4.3 The photoemissive effect 光电发射效应 1 Photoemissive effect of the metal 2 Photoemissive effect of the semiconductor * Incident light Electrode Ohmic contact Power supply Current Meter p n VA = 0 VA 0 VA 0 Hole diffusion current Hole drift current Electron diffusion current Electron drift current p n Hole diffusion current Hole diffusion current Hole drift current Hole drift current Electron diffusion current Electron diffusion current Electron drift current Electron drift current E E E *