IN-SITUANNEALINGOFCu(In,Ga)Se2FILMSGROWNBY.PDFVIP

IN-SITU ANNEALING OF Cu(In,Ga)Se FILMS GROWN BY ELEMENTAL CO- 2 EVAPORATION James D. Wilson, Robert W. Birkmire, William N. Shafarman Institute of Energy Conversion, University of Delaware, Newark, DE 19716 ABSTRACT behavior and consider the issue of a relationship between microstructure and device performance. The effect of in-situ post-deposition annealing on Cu(InGa)Se films grown by elemental co-evaporation on EXPERIMENTAL APPROACH 2 microstructure and solar cell performance has been characterized. Films were deposited at a substrate Cu(InGa)Se films were deposited on 1”x1” Mo- 2 temperature of 400°C and then annealed in-situ at 400°C, coated SLG substrates in a stationary bell-jar system 475°C, 500°C and 550°C for times from 1 - 60 min. using thermal evaporation from four Knudsen-type Devices made from films grown at 400°C and then elemental sources (copper, indium, gallium and selenium). annealed at 550°C for 1 minute had comparable efficiency Source fluxes were held constant throughout the to devices made from films grown at 550°C. Little or no