RBSP_EFW_TR_005_OP15TIDTest.doc.docVIP

RBSP EFW Preamp OP15A TID Test Report RBSP_EFW_TR_005 David Curtis, U.C. Berkeley RBSP EFW Systems Engineer Document Revision Record Rev. Date Description of Change Distribution List Name Email David Curtis, Systems Keith Goetz, PM John Bonnell, Inst CoI Ron Jackson, QA dwc@ssl.berkeley.edu goetz@umn.edu jbonnell@ssl.berkeley.edu ronj@ssl.berkeley.edu TBDs Identifier Description Reference Documents Ref Doc Number Title Overview A Total Ionizing Dose radiation test was performed for the RBSP EFW project on five OP15AJ/883 (Lot Date Code 0114N) opamps at National Semiconductor Gamma cell 220 radiation facilities in Santa Clara, CA, on December 8, 2008. Opamps were tested at 20, 50, 80, and 100 krads (Si), and after 24 and 48 hour room temperature biased anneal, and finally after another 120 hours at 100C biased anneal. Some parametric changes were seen during test, some of which were reversed by anneal, while other parameters were worse after anneal. Some parameters were out of spec during the test and after anneal, and use of the part at these radiation levels depends on if those changes can be tolerated. Test Procedure The devices were characterized prior to radiation and immediately after each dose (and after the anneal periods) using the opamp characterization setup described in section 2.1. The units were biased during dosing at +/-15V (100mA limit) using the circuit shown in Figure 1. The 5 parts were radiated simultaneously, and the total supply current was monitored during the test – no significant change was seen. Radiation test facility records are included in Appendix B, showing dose levels and rates. Figure 1 – Biasing circuit Parts were radiated to 20, 50, 80, and 100krads, and characterized after each dose. They were then allowed to anneal and re-tested after 24 and 48 hours at room temperature, then after another 120 hours at +100C. Opamp Characterizat