Ga掺杂ZnO纳米结构制备及发光特性地研究.pdf

摘要 3．Ga掺杂对ZnO纳米结构发光特性的调控 样品的可见发射(峰位=500nm)强度(或可见与近紫外峰强度比)随Ga掺杂浓 度升高而降低直至可见发射趋于消失。对纯和掺杂样品XPS谱中Ols峰进行分 峰处理后发现，与氧空位缺陷浓度正相关的空位氧峰相对强度(空位氧峰与晶格 氧峰的积分面积比)也随Ga掺杂浓度升高而降低直至空位氧峰消失。可见与近紫 外峰强度比及空位氧峰相对强度随Ga掺杂浓度的变化关系基本一致，可见与近 紫外峰强度比和空位氧峰相对强度之间成近似线性的变化关系。氧空位缺陷浓度 越高，样品的可见发射就越强、近紫外发射就越弱；反之则样品的可见发射就越 弱、近紫外发射就越强。由此推断可见发射来源于氧空位缺陷，Ga掺杂能减少 氧空位缺陷从而抑制样品的可见发射。我们的结论对于理解ZnO纳米结构中绿 光发射来源有一定参考价值。 关键词：ZnO纳米结构，Ga掺杂，表面形貌，光致发光，氧空位缺陷 Ⅱ Abstract Abstract Asan semiconductor important material，ZnOnano—structuredmateri．：als， one·dimensionalnanostructureshavearousedintereston in especially great study recent hasdistinct andchemical ZnO years．ZnO makes physical properties，which nanostructuresisnot for suitablebasic alsohas only research，butmanypotential asthe of devices．Researchon applications，such productionoptoelectronic synthesis ofZnO nanostructuresanddevice hascontinuedto some applications progress，but basic ofZnOmaterialsisstillin asthe ofthe properties doubt，suchoriginproblem visibleemissionsinZnOnanostructures．Itis knownthatthevisible generally emissionsinZnOnanostructuresarerelateda to ofdefectsinsidethematerial． Variet)r buthowtolink visibleemissionsatdifferent witha defecthas