半导体工艺基础第五章刻蚀..ppt

第五章 Etch 刻 蚀 西南科技大学理学院 2013.03.15 Etch 刻蚀内容 熟悉刻蚀术语 比较：干法刻蚀、湿法刻蚀 IC工艺中四种被刻蚀的材料和主要的刻蚀剂 IC工艺的刻蚀过程 注意刻蚀工艺中的危险 Definition of Etch Process that removes material from surface Chemical, physical or combination of the two Selective or blanket etch Selective etch transfers IC design image on the photoresist to the surface layer on wafer Other applications: Mask making, Printed electronic board, Artwork, etc. 栅掩膜对准 Gate Mask Alignment 栅掩膜曝光 Gate Mask Exposure Development/Hard Bake/Inspection Etch Polysilicon刻蚀多晶硅 Etch Polysilicon 继续 Strip Photoresist 剥去光刻胶 Ion Implantation Rapid Thermal Annealing 刻蚀术语 刻蚀速率 选择比 刻蚀均匀性 刻蚀剖面 湿法刻蚀 干法刻蚀 RIE：反应离子刻蚀 刻蚀速率 刻蚀均匀性 圆片上和圆片间的重复性 Standard Deviation Non-uniformity标准偏差不均匀性 N points measurements Max-Min Uniformity 最大最小均匀性 刻蚀选择比 Selectivity is the ratio of etch rates of different materials. Selectivity to underneath layer and to photoresist 举例 Etch rate for PE-TEOS PSG film is 6000 ?/min, etch rate for silicon is 30 ?/min, PSG to silicon 刻蚀剖面 刻蚀剖面 湿法刻蚀 Wet Etch 湿法刻蚀 Wet Etch Chemical solution to dissolve the materials on the wafer surface 刻蚀的副产品是气体液体或者是一些溶解在刻蚀溶剂中的物质 The byproducts are gases, liquids or materials that are soluble in the etchant solution. Three basic steps, etch, rinse and dry Wet Etch 纯粹的化学过程，且各向同性 Pure chemical process, isotropic profile 广泛的应用IC工业生产中，当特征尺寸小于3微米 Was widely used in IC industry when feature size was larger than 3 micron Still used in advanced IC fabs – 硅片的清洗Wafer clean – 表面薄膜的清除 Blanket film strip – 测试硅圆薄膜和清清洗Test wafer film strip and clean 湿法刻蚀剖面 Wet Etch Profiles 湿法刻蚀硅的氧化物 Silicon Dioxide 运用HF 溶液 Hydrofluoric Acid (HF) Solution HF 溶液中通常添入氟化铵，即为缓释溶液，或者掺入高纯水以减缓刻蚀速度 SiO2 + 6HF ? H2SiF6 + 2H2O Widely used for CVD film quality control BOE: Buffered oxide etch（氧化层缓释刻蚀） WERR: wet etch rate ratio（湿法刻蚀速率） Wet Etching Silicon or Poly Silicon etch normally use mixture of nitric acid (HNO3) and hydrofluoric acid (HF) HNO3 oxidizes the silicon and HF removes the oxide at the same time. DI