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Plasma-enhanced atomic layer deposition of Co using Co（MeCp）2 precursor.pdf
Availableonlineatwww．sciencedirect．com
hScelieennceDirect JeC
Ⅵvw．elsevier．com／joumaisd
journal—of-energy-chemistry／2095—4956
JournalofEnergyChemistry22(2013)403-407 Ⅵnvw．elesvire．com／locate／jngc
Plasma—enhancedatomiclayerdepositionof
CousingCo(MeCp)2precursor
JusangPark ， HanBo—Ram Leeb DoyoungKimc， JaehongYoon ，
，
ClementLansalotd JulienGatineaud HenriChevreld
I．●．．． ， ， ， HyungjunKim
a．Sc，ho，olofElectricalandElectronicEngineering,YonseiUniversity,Seoul,120—749,Korea； SchoolofMaterialsScienceandEngineering,lncheon
， NationalUniversity,Incheon，Korea；c．SchoolofElectricalandElectronicEngineering,UlsanCollege,Ulsan，680—479,Korea；
d．AirLiquideLaboratories，Wadai28,Tsukuba，IbarakiP ．Japan
[ManuscriptreceivedDecember17，2012；revisedMarch15，2013】
Abstract
Cobalt(Co)thermalorplasmaenhancedatomiclayerdeposition(PE—ALD)wasinvestigatedusinganovelmetalorganicprecursor,Co(MeCp)2，
na dNH3orH，ortheirplasmaasareactnat．Thegrowthcharacteristics．electricalandmicrostructuralpropertieswereinvestigated．Especially,
PE—ALDproducedCothinfilmsatlow growthtemperaturedownto100。C．Interestingly,thelow temperaturegrowht ofCofiimsshowedthe
fomr ationofcolumnarstructureatsubstratetemperaturebelow 300。C．Thegrowht characte~sticsna dfilmspropertieso
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