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LETTERS
Monitoring dopants by Raman scattering
in an electrochemically top-gated
graphene transistor
1 2 1 2 1 3
A. DAS , S. PISANA , B. CHAKRABORTY , S. PISCANEC , S. K. SAHA , U. V. WAGHMARE ,
K. S. NOVOSELOV4 1 4 2 1
, H. R. KRISHNAMURTHY , A. K. GEIM , A. C. FERRARI * AND A. K. SOOD *
1 Department of Physics, Indian Institute of Science, Bangalore 560012, India
2 Department of Engineering, Cambridge University, 9 JJ Thomson Avenue, Cambridge CB3 OFA, UK
3Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India
4 Department of Physics and Astronomy, Manchester University, Manchester M13 9PL, UK
*e-mail: acf26@eng.cam.ac.uk; asood@physics.iisc.ernet.in
Published online: 30 March 2008; doi:10.1038/nnano.2008.67
The recent discovery of graphene1–3 has led to many advances in Therefore, V is given by
G
two-dimensional physics and devices4,5. The graphene devices
fabricated so far have relied on SiO2 back gating1–3. EF
Electrochemical top gating is widely used for polymer VG ¼ e þ f ð1Þ
transistors6,7, and has also been successfully applied to carbon
nanotubes8,9. Here we demonstrate a top-gated graphene with EF/e being determined by the chemical (quantum)
transistor that is able to reach doping levels of up to capacitance of the graphene, and f being determined by the
5 31013 cm22, which is m
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