Monitoring dopants by Raman scattering in an electrochemically.pdfVIP

LETTERS Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor 1 2 1 2 1 3 A. DAS , S. PISANA , B. CHAKRABORTY , S. PISCANEC , S. K. SAHA , U. V. WAGHMARE , K. S. NOVOSELOV4 1 4 2 1 , H. R. KRISHNAMURTHY , A. K. GEIM , A. C. FERRARI * AND A. K. SOOD * 1 Department of Physics, Indian Institute of Science, Bangalore 560012, India 2 Department of Engineering, Cambridge University, 9 JJ Thomson Avenue, Cambridge CB3 OFA, UK 3Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India 4 Department of Physics and Astronomy, Manchester University, Manchester M13 9PL, UK *e-mail: acf26@eng.cam.ac.uk; asood@physics.iisc.ernet.in Published online: 30 March 2008; doi:10.1038/nnano.2008.67 The recent discovery of graphene1–3 has led to many advances in Therefore, V is given by G two-dimensional physics and devices4,5. The graphene devices fabricated so far have relied on SiO2 back gating1–3. EF Electrochemical top gating is widely used for polymer VG ¼ e þ f ð1Þ transistors6,7, and has also been successfully applied to carbon nanotubes8,9. Here we demonstrate a top-gated graphene with EF/e being determined by the chemical (quantum) transistor that is able to reach doping levels of up to capacitance of the graphene, and f being determined by the 5 31013 cm22, which is m