MFS结构器件用钛酸铋铌铁电薄膜制备与性能研究.pdf

MFS 结构器件用钛酸铋铌铁电薄膜制备与性能研究 ABSTRACT Based on the need of MFS structure devices, the Bi Ti O and Bi Ti Nb O 4 3 12 4 3-x x 12+x/2 (BTN, x=0.015、0.03、0.045、0.06、0.075) thin films were prepared on p-Si substrates by Sol-Gel method, taking advantage of NbCl 、Bi(NO ) 、C H O Ti as basic ion sources, 5 3 3 16 36 4 for the purpose of high quality and low cost of fabrication ferroelectric film on Si substrates. The effects of Nb content and annealing temperature on microstructure, ferroelectric and dielectric properties of ferroelectric thin films are investigated. The effects of Nb content and annealing temperature on oriented growth, phase structure, crystal size and morphology were investigated by the method of XRD, SEM. The effects of Nb content and annealing temperature on remanent polarization, coercive field, dielectric constant, dielectric loss and C-V characteristic were also measured by ZT-I and LCR meter (Agilent 4294A). The BTN thin films of randomly oriented, uniform and crack free, no pyrochlore phase or no other phases were made successfully by using Sol-Gel method at low temperature with low cost at the same time . The ferroelectric properties of ferroelectric thin flims were improved in keeping the good dielectric properties. The research shows that Nb content and annealing temperature are important to the microstructure and properties of BTN thin flims. Bi Ti Nb O thin films a