al8820systemEV0906概要.ppt

Output open Waveform 12Vac from ET 12Vac from AC source VET Vsw2 VBoost Vsw1 Output short Waveform VET Vsw2 VBoost Iled EMI AL8820 can’t pass conducted interference; 30M-1GHZ 150K-30MHZ Temperature test AL8820 Board Bottom Top The case temperature of IC is 77.6°C@ Ta=26.9.(Tr=50.7). IC Thermal Resistance test Test condition CC current forward voltage of MOSFENT body diodes Ambient temperature case temperature Thermal Resistance Connect SW1 to SW2; 300ma 0.701v 26 39 61.81 500ma 0.7196V 26 46.5 57.02 600ma 0.722V 26 50.6 56.786 800ma 0.725V 26 59 56.89 average 58.13 Power loss of IC =50.6/58.13=0.870w。 Calculate IC power loss 　TEST condition Pin　 Iin 　PF 　Vboost 　Vled 　Iled 　EFT 12Vac/60hz RCS=0.15 9.1w 0.8207 0.9357 24V 10.917V 0.652A 78.2% 1.整流桥损耗：0.35X2X0.8207=0.57449w 2.假设buck单级效率为0.92，计算Boost 输出电流：10.917*0.652/0.92/24=0.322A； 计算boost级二极管损耗：0.35*0.322=0.1127w 3.Buck 级二极管损耗：0.35*（1-10.917/24）*0.652=0.1246w 4.Boost 级电感铜耗：0.088*0.82072=0.059W 5.Buck 级电感铜耗：0.35*0.6522=0.149w 6. RCS 损耗：0.15*0.82072+0.15*0.3222=0.116 6.IC 功耗：9.1-10.917*0.652-0.57449-0.1127-0.1246-0.149-0.059-0.116=0.864w Power loss of AL8820 =50.6/58.13=0.870w。 Pin　 Diode (Rectifier) Diode (Buck) Inductor (Buck) Diode (Boost) Inductor (Boost) RCS (Buck+Boost) IC Pout Eff (With Rectifier) Eff AC(Buck+Boost) Tc (Ta=30OC) Test Result 9.1 0.574 0.125 0.149 0.113 0.059 0.115 0.87 7.11 78.1% 83.4% 80.6 Target 8.65 0.574 0.125 0.149 0.113 0.059 0.115 0.408 7.11 82.2% 88% 54.48 Power distributing vs efficiency The board will happen to OTP @Ta=105°c. Input voltage 　PF 　Pin(w) 　Vboost(v) 　Iboost(A) 　Vbuck(V) 　Ibuck(A) Single Buck EFT Single Boost EFF with Rectifier Total EFT 12Vac/60hz 0.9341 8.7535 22.07 0.3214 10.286 0.65744 0.9534 0.8103 0.7725 Test efficiency@ 12Vac/60hz The efficiency of single buck is very high(95%). The power loss of the boost with rectifier is larger than that of buck section. L1=10uH L1=22uH L1=33uH Fboost=769k Fboost=634k Fboost=509k Case temperature=81°C Case