分子束外延技术(MBE)的原理及其制备先进材料的研究进展重点分析.docx

分子束外延技术（MBE）的原理 及其制备先进材料的研究进展 XX （XXXX大学材料学院，西安 710000） 摘要： HYPERLINK /view/381170.htm 分子束外延(MBE)是50年代用真空蒸发技术制备半导体薄膜材料发展而来的,是为了满足在电子器件工艺中越来越高的要求. MBE是一个动力学过程，而不是一个热力学过程. 与其它外延薄膜生长技术相比，MBE具有许多特点,如生长速率低、衬底温度较低等. 在超薄层材料外延生长技术方面，MBE的问世使原子、分子数量级厚度的外延生长得以实现，开拓了能带工程这一新的半导体领域.半导体材料科学的发展对于半导体物理学和信息科学起着积极的推动作用. MBE是制备新型器件较为有用的方法，但是有其缺点.未来的发展趋势是结合其他生长技术不断改进MBE，如MBE与VPE并用、气态源分子束外延(GSMBE)、激光分子束外延（LaserMBE）等. 关键词：分子束外延；薄膜；生长技术；半导体 The principle of Molecular Beam Epitaxy (MBE) and the research progress in the preparation of advanced materials XX (Department of Materials,XXX,Xian 710000) Abstract: Molecular Beam Epitaxy was developed for the preparation of semiconductor thin film materials by vacuum evaporation technique in the 50s，which aims to meet the requirements of the electronic devices in the process of higher and higher. MBE is a dynamic process, not a thermodynamic process. MBE has many characteristics when comparing with other epitaxial thin film growth techniques , such as low growth rate, low substrate temperature and so on. The advent of MBE let the thickness of order of magnitude of atomic, molecular of epitaxial growth be achieved in ultrathin layer epitaxial growth technique, that has opened up Band Engineering,a new field of semiconductors. The development of semiconductor materials science plays an active role in the development of semiconductor physics and information science. MBE is a more useful way to prepare new devices, but there are shortcomings.In the future, the development trend is to continuous improving MBE with the combination of other growth techniques, such as combining MBE with VPE, Gas Source Molecular Beam Epitaxy, Laser Molecular Beam Epitaxy etc. Key words: Molecular Beam Epitaxy; thin film; growth techniques; semiconductor 1 前 言 分子束外延(MBE)是一项外延??膜生长技术，在超高真空的条件下，通过把由热蒸发产生的原子或分子束射到被加热的清洁的衬底上而生成薄膜.这种技术的发展是为了满足在电子器件工艺中越来越高的要求，即对掺杂分布可以精确控制的趋薄层平面结构的要求.利用分子束外延技术，可以重复地生长厚度只有5埃米(?)的超薄外延层， 而且外延层之间的分界面可以精确地控制生长.  HYPERLINK /view/381170.htm 分子束外延是50