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- 约 17页
- 2016-07-25 发布于浙江
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A UVLO Circuit in SiC Compatible With Power MOSFET Integration ( IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, VOL. 2, NO. 3, SEPTEMBER 2014);Paper Structure;Abstract;Introduction;BACKGROUND;DESIGN;Previous research 【17】;Schmitt trigger topology;UVLO;EXPERIMENTAL RESULTS;Conclusions;References;[8] J. B. Casady and R. W. Johnson, “Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review,” Solid-State Electron., vol. 39, no. 10, pp. 1409–1422, Oct. 1996.
[9] S. H. Ryu, “Development of CMOS technology for smart power applica
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