《Improvement on CDMESD Robustness of High Voltage Tolerant bLDMOS SCR Devices by Using DDG》.pptxVIP

Improvement on CDM ESD Robustness of High-Voltage Tolerant nLDMOS SCR Devices by Using Differential Doped Gate S.-H. Chen, D. Linten, M. Scholz, G. Hellings, R. Boschke*, and G. Groeseneken*imec, Kapeldreef 75, B-3001 Leuven, Belgium *: at Electrical Engineering Department, Katholieke Universiteit Leuven, B-3001 Leuven Y.-C. Huang and M.-D. Ker Department of Electronics Engineering, National Chiao Tung University, 300 Hsinchu, Taiwan 2014 IEEE;Structure;Abstract;Introduction;Introduction;DEVICES AND EXPERIMENTS;DEVICES AND EXPERIMENTS;DEVICES AND EXPERIMENTS;DEVICES AND EXPERIMENTS;RESULTS AND