Rashba自旋轨道耦合对声子辅助隧穿影响.pdfVIP

内蒙古人学硕I：学位论文 Rashba自旋轨道耦合对声子辅助隧穿的影响 摘要 本文在有效质量近似下，研究了局域于阱中的纵光学声子对共振隧穿的辅 助作用，以及Rashba自旋轨道耦合对隧穿的影响． 在AlxGal．xAs／GaAs／A1xGal．xAs对称双势垒结构中，我们采用转移矩阵和 Fermi黄金规则的方法，计算了声子辅助隧穿的跃迁几率和电流密度．结果表明， 由于自旋轨道耦合效应，电子发射声子跃迁几率和电流密度均分成两支，表现 为自旋向上支较小，而自旋向下支较大．对于考虑自旋轨道耦合，跃迁几率峰和 电流密度峰均小于不考虑自旋时的结果．另外，Rashba自旋轨道耦合不会改变声 子辅助峰的位置，无论是否考虑白旋轨道耦合，跃迁几率的峰值均出现在能量 差为阱内纵光学声子能量处，而电流密度也在同一偏压位置出现峰值．我们还 发现，Rashba自旋轨道耦合对两种自旋取向电子的声子辅助隧穿影响不同，对自 旋向下电子的声子辅助隧穿的影响明显强于对自旋向上电子的影响． 关键词：Rashba白旋轨道耦合；电子一声子相互作用；声子辅助隧穿；跃迁几率； 电流密度 内蒙古人学顺Ij学位论文 THE INFLUENCE OF RASHBA SPIN．0RBIT COUPLING ON PHONoN．ASSISTED TUNNELING ABSTRACT In this thesis，within the framework of an effective mass approximation，the phonon—assisted tunneling has been investigated by considering the longitudinal optical phonon modes localized in a well．The role of Rashba spin—orbit coupling in phonon—assisted tunneling is discussed in detail as well． The confined phonon emission rate and tunneling current in AlxGal．xAs／GaAs／A1xGal．xAs symmetric double barrier structures are calculated by using the transfer-matrix method and the Fermi golden rule．The results show that the well—longitudinal optical phonon emission rate and phonon assisted tunneling current densities both split clearly due to spin orbit coupling．The peak values of phonon emission rate and phonon assisted tunneling current become smaller for a spin—up electron；the opposite happens for a spin—down electron．Moreover,it can be found that the peaks of phonon assisted tunneling current with spin orbit coupling are smaller than that without spin orbit coupling．Additionally,the positions of the peaks of phonon assisted tunneling current do not change，regardless whether or not 内蒙古人学坝Ij学位论文 considering a spin orbit coupling．The peaks of phonon emission rate curve occur at the energy level separation 36．25meV,which corresponds to the well—longitudinal optical phonon energy．It is also found that the influences of Rashba spin orbit coupling on phonon assisted tunneling of a spin—down electron are more remarka