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Figure 4.3 Electron and hole mobilities versus impurity concentrations for germanium,silicon,and gallium arsenide at T=300K. (From Sze [14].) If is the mean time between collisions due to lattice scattering,thenis the probability of a lattice scattering event occurring in a differential time. Likewise,ifis the mean time between collisions due to ionized impurity scattering, thenis the probability of an ionized impurity scattering event occurring in the differential time .If these two scattering processes are independent ,then the total probability of a scattering event occurring in the differential time is the sum of the individual events,or whereis the mean time between any scattering event. (4.17) Comparing Equation (4.17) with the definitions of mobility given by Equation(4.13) or (4.14),we can write (4.18) Whereis the mobility due to the ionized impurity scattering process and is the mobility due the lattice scattering process ,The parameter is the net mobility .With two or more independent scattering mechanisms, the inverse mobilities add,which means that the net mobility decreases. 4.13 Semiconductor Conductivity and Resistivity The drift current density ,given by Equation (4.9),can be written as 4.19） where is the conductivity of the semiconductor material .The conductivity is given in units of ()and is a function of the electron and hole concentrations and mobilities . We have just seen that the mobilities are functions of impurity concentrations ; conductivity ,then is a somewhat complicated function of impurity concentration. The reciprocal of conductivity is resistivity, which is denoted by and is given in units of ohm. We can write resistivity as （4.20） Figure 4.4 is a plot of resistivity as a function of impurity concentration is silicon ,germanium,gallium arsenide,and gallium phosphide at .Obviously, the curves are not line