PECVD介绍.pptVIP

Plasma-enhanced CVD. Lev Berkovich MSE 550 Professor B. Bavarian March 21, 2005 Plasma-enhanced CVD Relation of PECVD to other processes Typical processes and hardware Specific applications Examples of PECVD modeling software PECVD and other CVD processes. What is Plasma-enhanced CVD Plasma Enhanced CVD (PECVD) is a process where glow-discharge plasma is sustained in a reaction chamber. This technology was developed to meet a demand from the semiconductor industry to have a low temperature process of silicon nitride films for the passivation and insulation of the complete devices, that could not be exposed to the temperatures that are normal for the CVD ~1000 0C. The most common way to excite the plasma is the RF field. PECVD is mostly used to deposit dielectrics, and therefore the DC excitation will not work. Frequency range is usually from 100kHz to 40MHz. The process does not require a deep vacuum, so the reduced pressure between 50 mtorr to 5 torr is used. The ion density is usually between 109 – 1011 1/cm3 and average electron energies are between 1 to 10 eV. Presence of plasma changes the thermodynamics of surface reactions and considerably lowers the temperature at which reactions are possible. For instance, for TiC the deposition reaction is not thermodynamically possible bellow 1218 0K. However, in a presence of plasma, the reaction is possible at as low as 700 0K. The following table provides a sampling of materials deposited by the PECVD process. PECVD films, Source gases and Deposition Temperatures PECVD reactors Tube or tunnel reactor PECVD reactors Reinberg-type cylindrical reactor PECVD reactors ECR plasma deposition reactors Applications of PECVD ULSI-DRAM memory cells Applications of PECVD. Chemical Vapor Deposition (CVD) of Teflon?-like Films Applications of PECVD Low Energy Plasma Enhanced CVD (LEPECVD) Applications of PECVD Nano-Master PECVD systems Applications of PECVD Plasma Induced Surface Modifications Plasma Cleaning Plasma Rea