07级微电子机械系统技术大作业.docVIP

简答： 什么是MEMS？ 硅片加工包括哪几个工艺步骤？ 基本光刻技术包括哪几个工艺步骤？ 光刻掩膜的阴版、阳版结构与光刻胶的正胶、负胶分别搭配使用时，能够刻蚀出什么样的结构？ 二氧化硅层的作用是什么，及其制备方法有哪些？ CVD反应步骤包括哪些？ 完成扩散工艺需要哪些步骤？ 湿法腐蚀技术包括哪两种，用化学方程式解释说明硅湿法腐蚀机理 硅自停止腐蚀技术包括哪几种，简要说明其中一种自停止腐蚀技术？ 如何通过自停止腐蚀技术制备“微喷嘴”，简要叙述其工艺步骤。 词汇： Moore’s Law pressure sensors accelerometers flow sensors inkjet printers deformable mirror devices gas sensors micromotors microgears lab-on-a-chip systems Sacrificial layer process Deep reactive ion etching Wafer bonding Piezoelectric films Bulk-micromachining Surface micromachining Integrated Circuit Processes Crystal growth Oxidation Lithography Etching Diffusion and ion implantation Metallization Chemical vapor deposition Assembly and packaging Crystal plane Diamond structure Doping Crystal oriention Isotropic etching of silicon Anisotropic etching of silicon Dopant dependent etch stop Electrochemical etch stop P-N Junction Etch Stop Dry Etching epitaxial Silicon substrate high-aspect-ratio MEMS领域英文文献翻译： Czochralski（CZ）pulled method Melt ultrapure polycrystalline silicon and small amount of dopant in a quartz crucible under an inert atmosphere. Clamp and dip a small single crystal see, with normal to its bottom face carefully aligned along a predetermined direction into the molten silicon. Once the temperature equilibrium is established, the temperature of the melt in the vicinity of the seed crystal is reduced, and silicon from melt begins to freeze out onto the seed crystal. The added materal is a structurally perfect extension of the seed crystal. The seed crystal is slowly rotated and withdrawn from the melt more and more silicon to freeze out on the bottom of growing crystal. Typical pull rate for 100mm dia ～ 20cm/hr. Plasmas Apply 1.5 kVDC over 15 cm, field is 100 V/cm. Breakdown of argon when electrons transfer a kinetic energy of 15.7 eV to the argon gas electrons migrate from the cathode to the anode . These energetic collisions generate a second electron and a positive ion for each successful strik