电子器件-10-OptoElectronic-1.pptxVIP

Chapter 8: Optoelectronic DevicesPresented by:Lei WangChapter 8: Optoelectronic DevicesChapter 8: Optoelectronic DevicesSemiconductorselectronsPhotonsPhotodiodeEmitters of photonsChapter 8: Optoelectronic DevicesPhotodiode光电二极管Detector探测器Coherent source 相干光源Solar cell太阳能电池 Dispersion色散light-emitting diode LED发光二极管incoherent source 非相干光源photovoltaic effect 光生伏特（打）效应Electroluminescence 电致发光Photoluminescence 光致发光attenuation of lights 光衰减Chapter 8: Optoelectronic DevicesIndex of refraction 折射率Graded-index fiber 变型光纤Step index fiber 突变型光纤Multimode fibers 多模光纤Single-mode fibers 单模光纤Spontaneous emission 自发辐射Stimulated emission 受激辐射Infrared红外Chapter 8.1: Photodiodes??EHP?°8.1.1 Current and voltage in an illuminated junctionChapter 8.1: PhotodiodesIf a steady light is shone only on the junction at an optical generation rate gop, electronsholesThe generation current will be Chapter 8.1: PhotodiodesIf the steady light is shone on the whole sample at gop, the excess carrier concentration on each side of junction can be written as On p sideOn n sideThe minority carriers within a diffusion length will diffuse toward to the junction and will be swept to the other side of junction by the electric field. Chapter 8.1: Photodiodes?Chapter 8.1: Photodiodesv-+photovoltaic effectThe short-circuit currentA forward voltage appears across an illuminated junction The open-circuit voltageChapter 8.1: PhotodiodesFor a symmetrical junction, pnnp, τpτn, pn/τngthgth represents the equilibrium thermal generation-recombination rateChapter 8.1: PhotodiodesAt equilibrium, the generation rate of excess carriers gi ?rn0p0, and the lifetime of the excess carrier is ?1/ ?rn0+p0Chapter 8.1: PhotodiodesAs the minority carrier concentration is increased by optical generation of EHP, the lifetime ?n becomes shorter, and gth becomes larger. Therefore, Voc can not increase indefinitely with increased generation rate. Voc is limitedby contact potential V0. Chapter 8.1: PhotodiodesCurrent does not de