凌惠华134135B15.docVIP

FigUre 4.2|(a) Electron and (b) hole mobilities in silicon versus temperature for various doping concentrations. Inserts show temperature dependence for almost intrinsic silicon. (From Pierret [8].) Mobility that is due to lattice scattering increases as the temperature decreases. Intuitively, we expect the lattice vibrations to decrease as the temperature decreases, which implies that the probability of a scattering event also decreases, thus increas- ing mobility. Mobility versus Figure 4.2 shows the temperature dependence of electron and hole mobilities in temperature silicon. In lightly doped semiconductors, lattice scattering dominates and the carrier mobility decreases with temperature as we have discussed. The temperature depen- dence of mobility is proportional to . The inserts in the figure show that the parameter n is not equal to as the first-order scattering theory predicted. However, mobility does increase as the temperature decreases. Ionized impurity The second interaction mechanism affecting carrier mobility is called ionized scattering imPurity scattering. We have seen that impurity atoms are added to the semiconductor to control or alter its characteristics. These impurities are ionized at room tempera- ture so that a coulomb interaction. exists between the electrons or holes and the ionized impurities. This coulomb interaction produces scattering or collisions and also alters the veloclty cha-racteristics of the charge carrier. If we denote as the mobility that would be observed if only ionized impurity scattering existed, then to first order we have where is the total ionized impurity concentration in the semicon- ductor. If temperature increases, the random thermal velocity of a carrier increases, reducing the time the carrier spends in the vicinity of the ionized impurity center. The less time spent in the vicinit