功率半导体器件物理与工艺研究讲述.ppt

The proposed BPL SOI LIGBT Buried P Layer Forward block characteristics improved Anti-ESD design Alleviate the effect of self-heating BPL SOI LIGBT 2D distribution of impact ionization rate in forward breakdown state Ellipse region Impact ionization center 2D distributions of electric field and breakdown current in forward breakdown state Ellipse region electric peak position The yellow ellipse region the critical breakdown electric field is the lowest 2D potential distribution in forward breakdown state Lateral potential distribution at different vertical position in forward breakdown state Vertical potential distribution at different lateral position in forward breakdown state Thermal Simulation Results Influence of Si thickness on thermal resistance Influence of BOX thickness on thermal resistance RF SOI LDMOS电路建模 ?SOI LDMOS基于物理的 分支紧凑电路模型 SOI LDMOS甲乙类功放电路设计 超高压FR W1 W2 S1 S2 Vr 10 10 96 101 1325 106 1385 111 1450 极大 116 1395 121 1320 101 111 1420 106 111 1360 15 10 96 106 1380 111 1450 极大 116 1400 121 1320 20 10 96 106 1380 111 1455 极大 116 1410 121 1340 20 15 96 106 1380 111 1455 极大 116 1412 121 1350 击穿电压 通态特性 关断特性 Hangzhou Dianzi University, Hangzhou, China Hangzhou Dianzi University, Hangzhou, China Hangzhou Dianzi University, Hangzhou, China Hangzhou Dianzi University, Hangzhou, China Hangzhou Dianzi University, Hangzhou, China Hangzhou Dianzi University, Hangzhou, China Hangzhou Dianzi University, Hangzhou, China Hangzhou Dianzi University, Hangzhou, China Hangzhou Dianzi University, Hangzhou, China Hangzhou Dianzi University, Hangzhou, China Hangzhou Dianzi University, Hangzhou, China Hangzhou Dianzi University, Hangzhou, China ICSE 2008 Proc. 2008, Johor Bahru, Malaysia 1e16/5e16,200/240keV 缓冲区初始掺杂 缓冲区浓度分布 涂胶1.5?m、光刻 注磷:剂量 能量120keV 去胶、去氮化层、 去表面氧化层 退火：1100℃ 氮气气氛 40min P-well掺杂 涂胶、光刻 注硼：剂量 能量120keV 去胶 退火：1000℃ 25min P-Well掺杂分布 P+阳极区和P-Well欧姆接触区掺杂 涂胶、光刻 注硼：剂量 能量40keV 去胶 RTA P+阳极区和P-Well欧姆接触