纳米科学与论述.pptVIP

Schematic process flow for the synthesis of regular arrays of oriented nanotubes on porous silicon by catalyst patterning and CVD 蚀刻技术 电子束蒸发 Electron micrographs of self-oriented nanotubes synthesized on n1-type porous silicon substrates. (A) SEM image of nanotube blocks synthesized on 250 mm by 250 mm catalyst patterns. The nanotubes are 80 mm long and oriented perpendicular to the substrate [see (F)]. (B) SEM imageof nanotube towers synthesized on 38 mm by 38 mm catalyst patterns. The nanotubes are 130 mmlong. (C) Side view of the nanotube towers in (B). The nanotubes self-assemble such that the edgesof the towers are perfectly perpendicular to the substrate. (D) Nanotube “twin towers,” a zoom-inview of Fig. 2C. (E) SEM image showing sharp edges and corners at the top of a nanotube tower.(F) SEM image showing that nanotubes in a block are well aligned to the direction perpendicular to the substrate surface. (G) TEM image of pure multiwalled nanotubes in several nanotube blocksgrown on a n1-type porous silicon substrate. A Benzene-Thermal Synthetic Route to Nanocrystalline GaN Yi Xie, Yitai Qian, Wenzhong Wang, Shuyuan Zhang, Yuheng Zhang A thermal reaction of Li3N and GaCl3 in which benzene was used as the solvent under pressure has been carried out for the preparation of 30-nanometer particles of gallium nitride (GaN) at 280°C. This temperature is much lower than that of traditional methods, and the yield of GaN reached 80%. 苯热法 钱逸泰 Single-crystal nanorings of ZnO were grown by a solid-vapor process. The raw material was a mixture of ZnO (melting point 1975°C), indium oxide, and lithium carbonate powders at a weight ratio of 20:1:1, and it was placed at the highest temperature zone of a horizontal tube furnace. Before heating to a desired temperature of 1400°C, the tube furnace was evacuated to 10-3 torr to remove the residual oxygen. The source materials were then heated to 1400°C at a heating rate of 20°C/min. ZnO decomposes into Zn2+ and O2– at high tempe