CharacterizationofFD-SOIMOSFETsBasedonEKVmodel.pptVIP

* Characterization of FD-SOI MOSFETs Based on EKV model Daniel Tomaszewski1, Denis Flandre2, Piotr Grabiec1, Andrzej Kociubinski1, Christian Renaux2, Krzysztof Kucharski1 1 Institute of Electron Technology, Warszawa, Poland 2 Université Catholique de Louvain, Louvain-la-Neuve, Belgium presented by Daniel Tomaszewski MOS-AK Workshop, Grenoble, 2005 OUTLINE MOTIVATION MOSTXX APPLICATION EKV MODEL IMPLEMENTATION EXTRACTION OF THE PARAMETERS SUMMARY, FUTURE MOTIVATION The FD-SOI becomes an attractive choice for small research groups and SME’s, where research projects related to ASICs /MEMS integration are carried out. A MOSTXX application for MOSFET parameter extraction has been developed in the ITE as a cost effective tool for characterization of the CMOS ICs. Recently the EKV model, has been implemented. The paper reports results of EKV model parameter extraction for the FD-SOI MOSFETs. The analysis has been done using the MOSTXX software. MOSTXX application Integration with MS Excel ?Local” extraction: Threshold voltage Mobility ?Global” extraction: MOSFETs parameters Diodes parameters (I-V, C-V) Extraction of dimensions variations using sets of devices Edge component Area component EKV MODEL IMPLEMENTATION The EKV model accounts for weak and strong inversion ranges and is based on interpolation of F(v) The Oguey, Cserveny approximation The approximation in the EKV enhanced in order to calculate F”(v) TECHNOLOGY n+-poly-Si gate material Boron implantation of the n- and p-channel MOSFETs Basic parameters of the process: Buried oxide thickness TBOX = 400?nm Final thickness of the silicon film TSi = 80?nm Gate oxide thickness TOX = 31?nm Junction depth XJ = TSi(assumed) 0.75÷2?μm FD-SOI CMOS process on SmartCut UNIBOND wafers. Semi-recessed LOCOS used to isolate the devices. DEVICES I(VGS) data of intrinsic (I-type) n- and p-channel MOSFETs I(VGS) data of highly doped (P12-type) n- and p-channel MOSFETs DEVICES I(VDS) data of P2- and P12-type n-chan