模拟电路Ch学习指导书.pptVIP

4.2 Junction Field-Effect Transistor 4.2.1 Structure and Operation 4.2 Junction Field-Effect Transistor 4.2.1 Structure and Operation 2. The Operation ① vGS Controls the Channel Conductance 2. The Operation ② vDS Controls the Channel Conductance 2. The Operation ③ vGS and vDS are applied on the FET 4.2.2 The Current-Voltage Characteristics and Parameters 1. Output Characteristics 4.2.2 The Current-Voltage Characteristics and Parameters 3. Parameters Example 4.3.1 Sol: * 4.2.2 The Current-Voltage Characteristics and Parameters N-channel Symbol 1 Structure （n-channel ） vGS＜0 Depletion region completely fills the channel is pinchoff. While vGS is called pitchoff voltage VP （ or VGS(off) ). For n-channel，VP 0. pn reverse-biased depletion region widens channel narrows vGS is smaller, channel is narrower. （n-channel ） If vGS=0, vDS? iD ? PN junctions of gate and drain reverse-biased, depletion near D-terminal expend into channel. Further vDS ? pitchoff region becomes large. iD does not increase. vDS increases to vGD=VP , pitchoff occurs at D terminal. Channel resistance varies along the channel. （n-channel） When VP vGS0, channel is more easy to pitchoff. For the same vDS , iD is smaller than that vGS=0. When pitchoff just occurs, vGD=vGS-vDS =VP . 2. Transfer Characteristics ① Pitchoff voltage VP : ② Saturation current IDSS: Gate-to –source voltage When iD ?0. Drain current when VGS=0. It is related output current to input voltage. ④ Output resistance ro: ③ Transconductance gm: Determine the voltage gain, input and output resistances. Assume gm =18mS, ?=100, r? =1k? . (1)Small-signal equivalent circuit because {end} *