基于沉淀法制备氧化锌纳米颗粒及其结构性能测试概要.ppt

Reporter : 傅楚娴 Contents Experimental procedure Results and discussion Conclusions Introduction Introduction Some introductions of ZnO properties: wurtzite structure wide band gap semiconductor, high exciton binding energy (~60MeV) applications:gas sensors, biosensors , solar cell , electrochemical cells synthesis: vapor phase, solution , solid Introduction PVD/CVD Wet Chemical Process multiple steps sophisticated equipment high temperature cost-effective scalable wide variety of ZnO Introduction Preparation of ZnO nanoparticles Materials characterization Preparation of ZnO nanoparticles Fig. 1. The summarized of synthetic procedures for the ZnO nanoparticles by precipitation method. Materials characterization XRD BET TG-DTA PL SEM TG-DTA analysis of precursor XRD analysis of precursor XRD analysis of ZnO nanoparticles Effect of annealing temperature on ZnO morphology Photoluminescence characterization TG-DTA analysis of precursor Fig. 2. TG-DTA curves of the ZnO precursor. XRD analysis Fig. 3. XRD patterns of ZnO nanoparticles synthesized by annealing the precursor at (a) 250 ℃, (b) 350 ℃， (c) 450℃ and (d) 550℃, for 4 h in air. Inset is the XRD pattern of the ZnO precursor. Zn4（CO3）（OH）6·H2O XRD analysis Fig. 4. XRD pattern of ZnO nanoparticles synthesized by annealing the precursor at 550℃. The bar graphs represents XRD pattern of ZnO reference. Table 1 Comparison between measurement XRD results of ZnO nanoparticles (annealed at 550℃ for 4 h) and standard pattern for ZnO powder. XRD analysis XRD analysis Fig. 5. The trend of lattice parameters (‘a’ and ‘c’) at different annealing temperatures. Table 2 Some measured properties of the ZnO nanoparticles. XRD analysis