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PartitionDriven Standard Cell Thermal Placement分区驱动标准电池热放置
Partition-Driven Standard Cell Thermal Placement Guoqiang Chen Synopsys Inc. Sachin Sapatnekar Univ of Minnesota For ISPD 2003 Outline Introduction Thermal Placement Simplified Thermal Model for Partitioning Partition-Driven Thermal Placement Experimental Results Conclusion Why Thermal Placement? Thermal problem is projected to be a major bottleneck for the next-generation circuits Placement is the natural starting point in the design process where we take thermal problem into consideration Typical Heat Conduction Environment of the Wafer Thermal Equation Partial differential equation We will consider the steady state version: Poison Equation Applying finite difference method and eliminating internal mesh nodes yields G T = P G is the thermal conductance matrix T and P are the temperature and power density vector over mesh nodes on the top surface of the wafer Thermal Placement Minimize max. temperature variation Problem formulation: Find permutation ? of Pi: {1, …,n} ? {1,…n} such that δT = max|Ti-Ti,neighbor| is minimized (No wire-length/timing considerations) This is a NP-hard problem already Previous work Chu and Wong, TCAD98: matrix synthesis Tsai and Kang, TCAD00: simulated annealing based Partition-Driven Thermal Placement Partition based placement methods are powerful methods to solve the placement problems Could we easily extend Tsai and Kang’s work for partition driven placement? Two Obvious Approaches Use equation G T=P directly at each partitioning step During the early partitioning stages, we do not know where the cells will be eventually located Too expensive to compute Compute the desired power distribution, and try to match the power distribution during partition stages Difficult to get an exact budget for the power distribution We are not optimizing the temperature directly Outline Introduction Thermal Placement Simplified Thermal Model for Partitioning Partition-Driven Thermal Placement Experimental Results Conclusion Simplified Ther
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