微波电浆化学气相沉积法合成准直性碳奈米管及碳奈米尖锥之-明道大学.doc

下面提供”實驗報告”格式例子供參考 緩衝層輔助MPCVD法合成碳奈米之製程性質 研究生： 指導教授： 教授 大學 材料科學與工程研究所 摘要 本研究利用微波電漿化學氣相沉積法(MPCVD)，甲烷(CH4)與氫氣(H2)為反應氣體，鎳(Ni)與鐵(Fe)為觸媒，開發出矽晶片上合成10 nm的緩衝層及2~10 nm的觸媒薄膜。接著將鍍好的矽晶片在MPCVD進行氫電漿前處理及碳奈米管沉積。沉積後的碳奈米管藉由掃描電子顯微技術(SEM)、穿透電子顯微技術(HRTEM)、拉曼光譜技術(Raman spectroscopy)、場發射J-E測量法加以。從可得下列結論。 ?m (在電流密度0.01 mA/cm2時)，而電流密度3.4 mA/cm2 (在4.9 V/?m的電壓時)。 Processes and properties of the horizontally-oriented SWNTs networks deposited by the buffer-layer assisted MPCVD Graduate student: Kai-Ling Chen Professor: Cheng-Tzu Kuo MingDao University Institute of Materials Science Engineering Abstract In this work, the horizontally oriented single-walled carbon nanotubes (SWNTs) networks deposited directly on Si wafer substrate by the buffer layer-assisted microwave plasma chemical vapor deposition (MPCVD) method were successfully developed, using CH4, C2H2 and H2 as the source gases, and Fe and Ni as catalyst materials. The buffer layer materials include AlON, AlN, Al2O3, TiO2, TiON, TiN, TiCN and ITO. The Si substrates were first deposited with 10 nm buffer material by DC reactive sputtering, and then deposited with 2 ~ 10 nm catalyst by E-gun sputtering. The coated substrates were followed by H-plasma pretreatment in MPCVD, and then conducted the CNTs deposition in the same system. The structure and properties of the deposits at each step were characterized by FESEM, TEM, HRTEM, Raman spectroscopy with auto temperature control and field emission I-V measurements. From the experimental results, the following conclusions can be drawn. Regarding effects of buffer layer material on CNTs growth, the results indicate that the root-growth SWNTs net works are much favor to be formed on substrates with Al-base materials as buffer. Effects of buffer layer (such as Al-base materials) are essentially to provide the sur