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Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells.pdf

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Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells.pdf

Solar Energy Materials Solar Cells 158 (2016) 2–10 Contents lists available at ScienceDirect Solar Energy Materials Solar Cells journal homepage: /locate/solmat Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells Josua Stuckelberger a,n, Gizem Nogay a, Philippe Wyss a, Quentin Jeangros a, Christophe Allebé b, Fabien Debrot b, Xavier Niquille a, Martin Ledinsky c, Antonin Fejfar c, Matthieu Despeisse b, Franz-Josef Haug a, Philipp L?per a, Christophe Ballif a a école Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, 2002 Neuchatel, Switzerland b CSEM PV-Center, Jaquet-Droz 1, 2002 Neuchatel, Switzerland c Laboratory of Nanostructures and Nanomaterials, Institute of Physics, Academy of Sciences of the Czech Republic, v. v. i., Cukrovarnická 10, 162 00 Prague, Czech Republic article info Article history: Received 31 March 2016 Received in revised form 6 June 2016 Accepted 16 June 2016 Available online 9 July 2016 Keywords: Surface passivation Passivating contact Nanostructure Silicon oxide Nanocrystalline Microcrystalline Poly-silicon Crystallization Raman Transmission line measurement Phosphorous diffusion abstract We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell front side. Targeting enhanced transparency, the poly-Si layer is replaced with a mixed-phase silicon oxide/silicon layer. This mixed-phase layer consists of an amorphous SiOx matrix with incorporated Si ?laments connecting one side of the layer to the other, and is referred to as nanocrystalline silicon oxide (nc-SiOx) layer. We investigate passivation quality, measured as saturation current density, and nanostructural changes, characteri