Understanding Metal Induced Recombination Losses in Silicon Solar Cells with Screen Printed Silver Contacts.pdfVIP
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Understanding Metal Induced Recombination Losses in Silicon Solar Cells with Screen Printed Silver Contacts.pdf
Available online at
ScienceDirect
Energy Procedia 98 (2016) 23 – 29
6th Workshop on Metallization and Interconnection for Crystalline Silicon Solar Cells, 2016
Understanding metal induced recombination losses in silicon solar cells with screen printed silver contacts
Daniel Inns
DuPont, Silicon Valley Tehcnology Center, Sunnyvale California, 94085, USA
Abstract There have been great improvements in silicon solar cell voltage across the last 5 years. A great deal of the gains can be attributed to application of lighter phosphorus emitter diffusions which deliver higher cell voltages, combined with the complementary silver metallization pastes which can contact those emitters. As the voltages continue to increase over time, metal recombination losses become more important to understand. The surface doping, junction depth, and metal contact used are all factors in determining the metal recombination rate which covers a range of approximately 400-1500 fA/cm2 for standard cases. Silver contact pastes modulate recombination by changing the way they etch the emitter surface, and semiconductor models indicate that the recombination rate can decrease to 200 fA/cm2 as metallization paste technology continues to improve. ?(PP?hetee2te2pr0-r:01r/-e/16rcve6rTiveeThiaweethiwveAuenuAucdtonheumdrotherrmsreo.sorrpPsneo.ussn.pbPoslouriigsnbbh/isllleiiiisbcdtyheiblneoiydstfyeEtbsho/lybsefeyEotv-hrlnigesecera-onvnLriidtzged/ira4n.n.LTg0iht/zc)diio.sn.mgismcaiontmteoepmeoinftttaehceecoeMsfsethtaareltliiMczlaeetituoannldliWezraotthrikoesnChoWCpoB2rY0k1-sN6hCop-N2D01li6c.ense Keywords: screen print, silver, contact, recombination, silicon, solar cell, metal
1. Introduction
Industrial solar cell open-circuit voltages (Voc) have increased across the last 5 years, partly enabled by changes in silver paste technology starting in 2011 which could contact lighter, higher efficiency emitters [1]. As Voc continues to climb due to improved wafer lifetimes and improvements to the rear surface, th
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