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1. energy separation(energy difference)between the quantum dot (QD) groundand first-excited states能量间隔
2. Analysis by Transmission Electron Microscopy (TEM) has identified分析
3. Whilst同时
4. Stacking Fault s (SF) and threading dislocations (TD) are often associated with the large latticemismatch in most III – V semiconductor films.与…有关
5. the GaAs barrier layerwas divided in two parts分割
6. a characteristicv-shapegliding有…特征
7. Thepresence of these SFs is observed to create surface QDs被认为是
8. Areas区域
9. extending to延伸至
10. In contrast to与…对比
11. we would suggest this could be related to我们认为
12. dislocationsoccurring at the microscopic level出现在
13. migrate away from迁移开
14. spectral response光谱响应
15. in terms of根据,与…有关
16. composition,content组分
17. attractingstrong interest引起兴趣
18. aspects such as许多方面例如
19. As previously reported正如以前报道的
20. Theemission wavelength of the QDs red-shifted by 300 nm红移了300nm
21. As the composition is increased, there is anincrease in density and size随着…增加什么增加
22. the reduction ofPL intensity for larger compositions occurs as aresult of threading dislocations being formed
23. suppressed by压制,抑制
24. epilayer外延层
25. variation变化
26. interrupted growth method间断生长
27. ion (Ar+) laser with 514.53 nm氩离子激光波长
28. it can be seen that从…可以看出
29. reveal a strongquantum localization effect展示
30. Such a blue shift in EL wavelengthcould be attributed to the band-filling effect of localized energystates蓝移,归咎于,能带填充效应
31. Ablueshift of 3 and 1.7 cm?1蓝移
32. Incorporating结合
33. 1.3–1.6mm has beenachieved forInAs/GaAs QDs by实现
34. are limited by性能局限于
35. received littleattention to date现在已经没人关注
36. spacer layer隔离层
37. the initial 15 nm of theGaAs SPL was deposited at 5101C, followingwhich the temperature was increased to 580 1 C forthe remainder of the GaAs SPL随后
38. thermal escape热逃逸
39. QD ensembles量子点群
40. the value ofEE值
41. are dramatically reduced巨大的
42. takes place发生,出现
43. QD PL bandcaused by PL图,引起
44. are taken into account考虑
45. activeregion活性区
46. verti
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