不同类型GaAs上应用约束刻蚀剂层技术进行电化学微加工.pdfVIP

[Article] 物理化学学报(Wuli Huaxue Xuebao) Acta Phys. 鄄Chim. Sin., 2009, 25(8)：1671-1677August Received: January 8, 2009; Revised: May 16, 2009; Published on Web: June 12, 2009. 鄢Corresponding author. Email: jingtang@; Tel: +86鄄592鄄2185797. The project was supported by the National Natural Science Foundation of China and Fund of National Engineering Research Center for Optoelectronic Crystalline Materials of China (2005DC105003). 国家自然科学基金和国家光电子晶体材料工程技术研究中心开放课题(2005DC105003)资助项目 鬁 Editorial office of Acta Physico鄄Chimica Sinica 不同类型 GaAs上应用约束刻蚀剂层技术进行电化学微加工 汤 儆鄢 王文华 庄金亮 崔 晨 (厦门大学化学化工学院化学系,福建厦门 361005) 摘要： 应用约束刻蚀剂层技术(CELT)对 GaAs进行电化学微加工.研究了刻蚀溶液体系中各组成的浓度比例、 GaAs类型、掺杂以及阳极腐蚀过程对 GaAs刻蚀加工过程的影响.循环伏安实验表明, Br-可以通过电化学反应 生成 Br2作为刻蚀剂, L鄄胱氨酸可作为有效的捕捉剂. CELT中刻蚀剂层被紧紧束缚于模板表面,模板和工件之 间的距离小于刻蚀剂层的厚度时,刻蚀剂可以对 GaAs进行加工.利用表面具有微凸半球阵列的导电模板,可以 在不同类型 GaAs上加工得到微孔阵列.实验结果表明:在相同刻蚀条件下, GaAs的加工分辨率与刻蚀体系中 各组分的浓度比例有关,刻蚀结构的尺寸随着刻蚀剂与捕捉剂浓度比的增加而增大;在加工过程中, p鄄GaAs相 对于 n鄄GaAs和无掺杂 GaAs受到阳极氧化过程的影响较为显著, p鄄GaAs表面易生成氧化物层,影响电化学微 加工过程. X射线光电子能谱(XPS)和极化曲线实验也证明了这一点. 关键词： 阳极溶解; 砷化镓; 约束刻蚀剂层技术; 刻蚀剂; 捕捉剂 中图分类号： O646 Electrochemical Micromachining on Different Types of GaAs by Confined Etchant Layer Technique TANG Jing鄢 WANG Wen鄄Hua ZHUANG Jin鄄Liang CUI Chen (Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, Fujian Province, P. R. China) Abstract： The confined etchant layer technique (CELT) was applied to electrochemical micromachining on different types of GaAs (p鄄type, n鄄type, undoped). Cyclic voltammetry curves showed that the etchant bromine was generated on the mold and L鄄cystine was thus used as an efficient scavenger to react quickly with the etchant. Therefore, the etchant was confined very close to the surface of the mold and it etched the workpiece of GaAs when the distance between the mold and workpiece was less than the thickness of the confined etchant layer. An array of concave microstructures was fabricated on different types of GaAs by CELT