BQ4830YMA-85;中文规格书,Datasheet资料.pdfVIP

Features ? Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery? Real-Time Clock counts seconds through years in BCD format? RAM-like clock access? Pin-compatible with industry- standard 32K x 8 SRAMs? Unlimited write cycles? 10-year minimum data retention and clock operation in the ab- sence of power? Automatic power-fail chip dese- lect and write-protection? Software clock calibration for greater than 1 minute per month accuracy? 10% tolerance of VCC for write- protect General Description The bq4830Y RTC Module is a non- volatile 262,144-bit SRAM organ- ized as 32,768 words by 8 bits with an integral accessible real-time clock. The device combines an internal lithium battery, quartz crystal, clock and power-fail chip, and a full CMOS SRAM in a plastic 28-pin DIP module. The RTC Module di- rectly replaces industry-standard SRAMs and also fits into many EPROM and EEPROM sockets without any requirement for special write timing or limitations on the number of write cycles. Registers for the real-time clock and clock calibration are located in regis- ters 7FF8h–7FFFh of the memory ar- ray. The clock registers are dual-port read/write SRAM locations that are updated once per second by a clock control circuit from the internal clock counters. The dual-port regis- ters allow clock updates to occur without interrupting normal access to the rest of the SRAM array. The bq4830Y also contains a power fail-detect circuit. The circuit dese- lects the device whenever VCC falls below tolerance, providing a high de- gree of data security. The battery is electrically isolated when shipped from the factory to provide maxi- mum battery capacity. The battery remains disconnected until the first application of VCC. 1 bq4830Y 1 PN483001.eps 28-Pin DIP Module 2 3 4 5 6 7 8 28 27 26 25 24 23 22 21 9 10 20 19 11 12 18 17 13 14 16 15 VCC WE A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS Sept. 1996 B Pin Connections P