Phase lapses in scattering through multi-electron quantum dots Mean-field and few-particle.pdf
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Phase lapses in scattering through multi-electron quantum dots Mean-field and few-particle
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Phase lapses in scattering through multi-electron quantum dots:
Mean-field and few-particle regimes
Andrea Bertoni?
CNR-INFM National Research Center on nanoStructures and bioSystems at Surfaces (S3),
Via Campi 213/A, 41100 Modena, Italy
Guido Goldoni
CNR-INFM National Research Center on nanoStructures and bioSystems at Surfaces (S3),
Via Campi 213/A, 41100 Modena, Italy and
Dipartimento di Fisica, Universita? di Modena e Reggio Emilia, 41100 Modena, Italy
Abstract
We show that the observed evolution of the transmission phase through multi-electron quantum
dots with more than ~ 10 electrons, which shows a universal (i.e., independent of N) as yet
unexplained behavior, is consistent with an electrostatic model, where electron-electron interaction
is described by a mean-field approach. Moreover, we perform exact calculations for an open
1D quantum dot and show that carrier correlations may give rise to a non-universal (i.e., N -
dependent) behavior of the transmission phase, ensuing from Fano resonances, which is consistent
with experiments with a few (N 10) carriers. Our results suggest that in the universal regime
the coherent transmission takes place through a single level while in the few-particle regime the
correlated scattering state is determined by the number of bound particles.
PACS numbers: 73.63.Kv, 03.65.Nk, 72.10.-d 73.23.Hk
1
I. INTRODUCTION
Among the experiments that exploit the coherent dynamics of carriers, the one performed
in 1997 by Schuster et al.1, in which the transmission phase of an electron scattered through
a quantum dot (QD) was measured, constitute an ideal test on the validity of different
theoretical models for the inclusion of electron-electron interaction. In fact, the ability to
model coherent carrier transport experiments in low-dimensional semiconductor systems is
essential for designing possible future devices for coherent electronics o
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