A solution-processed high-efficiency p-NiO_n-ZnO heterojunction photodetector.pdf

下载文档

3
0
约2.8万字
约 7页
2017-04-11 发布于江苏
举报
版权申诉
保障服务

A solution-processed high-efficiency p-NiO_n-ZnO heterojunction photodetector.pdf

1、本文档共7页，可阅读全部内容。
2、原创力文档（book118）网站文档一经付费（服务费），不意味着购买了该文档的版权，仅供个人/单位学习、研究之用，不得用于商业用途，未经授权，严禁复制、发行、汇编、翻译或者网络传播等，侵权必究。
3、本站所有内容均由合作方或网友上传，本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺！文档内容仅供研究参考，付费前请自行鉴别。如您付费，意味着您自己接受本站规则且自行承担风险，本站不退款、不进行额外附加服务；查看《如何避免下载的几个坑》。如果您已付费下载过本站文档，您可以点击这里二次下载。
4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等，请点击“版权申诉”（推荐），也可以打举报电话：400-050-0827(电话支持时间：9:00-18:30)。

A solution-processed high-efficiency p-NiO_n-ZnO heterojunction photodetector

RSC Advances PAPER P u b l i s h e d o n 2 0 J a n u a r y 2 0 1 5 . D o w n l o a d e d b y N o r t h w e s t e r n P o l y t e c h n i c U n i v e r s i t y o n 2 6 / 1 2 / 2 0 1 5 1 3 : 5 2 : 4 1 . View Article Online View Journal | View IssueA solution-proceaMaterials Science and Engineering Divis National Institute of Standards and Tech E-mail: ratan.debnath@ bDepartment of Electrical and Computer Eng Park, MD 20742, USA cN5 Sensors Inc., Rockville, MD 20852, USA dSemiconductor and Dimensional Metro Laboratory, National Institute of Standar 20899, USA eKey Laboratory for the Physics and Chem Beijing, China fInstitute for Research in Electronics and A College Park, MD 20742, USA Cite this: RSC Adv., 2015, 5, 14646 Received 14th November 2014 Accepted 19th January 2015 DOI: 10.1039/c4ra14567d /advances 14646 | RSC Adv., 2015, 5, 14646–1465ssed high-efficiency p-NiO/n-ZnO heterojunction photodetector Ratan Debnath,*a Ting Xie,ab Baomei Wen,ac Wei Li,de Jong Y. Ha,af Nichole F. Sullivan,c Nhan V. Nguyend and Abhishek Motayedaf This paper presents a high efficiency heterojunction p-NiO/n-ZnO thin film ultraviolet (UV) photodetector (PD) fabricated on conductive glass substrates. The devices are fabricated by using a simple spin-coating layer-by-layer method from precursor solutions. Photodiodes show good photoresponse and quantum efficiency under UV illumination. With an applied reverse bias of 1 V, the devices show maximum responsivity and detectivity of 0.28 A W1 and 6.3 1011 Jones, respectively, as well as high gain with external quantum efficiency (EQE) of over 90%. By employing ultrathin Ti/Au as top UV transparent metal contacts, this architecture allows the PDs to be illuminated either through glass or metal side. Laser beam induced current is used to examine the local variation of EQE providing information on the photoresponse behavior within the device. Optical properties of NiO and ZnO deposits have also been explored.1. Introduction Trans