BLF7G20LS-140P,118;BLF7G20LS-140P,112;中文规格书,Datasheet资料.pdf

http 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ηD ACPR400k ACPR600k EVMrms (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) (%) CW 1805 to 1880 850 28 125 17 54 - - - GSM EDGE 1805 to 1880 850 28 60 17.5 41 ?61 ?75 2.7:/// NXP Semiconductors BLF7G20LS-140P Power LDMOS transistor http2. Pinning information [1] Connected to flange. 3. Ordering information 4. Limiting values 5. Thermal characteristics Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] 4 5 3 21 4 3 5 1 2 sym117 Table 3. Ordering information Type number Package Name Description Version BLF7G20LS-140P - earless flanged LDMOST ceramic package; 4 leads SOT1121B Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage ?0.5 +13 V Tstg storage temperature ?65 +150 °C Tj junction temperature - 200 °C Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from