BLF7G24L-140,118;BLF7G24LS-140,118;中文规格书,Datasheet资料.pdf

http 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. [2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 1.2 Features and benefits ? Excellent ruggedness ? High efficiency ? Low Rth providing excellent thermal stability ? Designed for low memory effects providing excellent digital pre-distortion capability ? Internally matched for ease of use ? Integrated ESD protection ? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications ? RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to 2400 MHz frequency range BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 Product data sheet Table 1. Typical performance Typical RF performance at Tcase = 25 ?C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ?D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2300 to 2400 1300 28 30 18.5 26.5 ?45[1] 1 carrier W-CDMA 2300 to 2400 1300 28 50 18.5 33 - ?35[2]:/// NXP Semiconductors BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor http2. Pinning information [1] Connected to flange. 3. Ordering information 4. Limiting values 5. Thermal characteristics Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G24L-140 (SOT502A) 1 drain 2 gate 3 source [1] BLF7G24LS-140 (SOT502B) 1 drain 2 gate 3 source [1] 3 2 1 sym112 1 3 2 3 2 1 sym112 1 3 2 Table 3. Ordering information Type number Package Name Description Version BLF7G24L-140 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF7G24LS-140 - earless flanged LDMOST ceramic package; 2 leads SOT502B Table 4. L