Introduction to PAMiD.pdfVIP

1 Introduction ? Module solutions to address growing RFFE complexity. ? PAMiD : PA + Duplexer + Filter + ASM 2 S011 ? Take Qualcomm S011 for example[2]: 3 S011 ? Application[2]: ? Covering LTE/WCDMA/HSUPA Band 1, 2, 3, 4, DCS, PCS, Aux Ports ? Integration of SAW duplexers, Switches, Envelope Tracking PA, Coupler ? Supporting Inter band Carrier Aggregation Bands 1+3 and 2+4 ? Single ended in and outputs of all RX ports 4 S011 ? Schematics[3]: 5 S011 ? S011 should NOT be in the same shielding cavity with WTR device to avoid VCO pulling issue[3]. S011 Transceiver S011 Transceiver PAD VCO Transceiver Tx signal 6 S011 ? It is acceptable to share the cavity with other[3]. LB PAMiD MB PAMiD HB PAMiD 7 S011 ? Do not place S011 back-to-back with other heat- generating components, such as application processor, another PAs, or PMIC that may work at the same time with S011[3] ? Otherwise, there will be thermal issue, thereby aggravating RF performance. 8 S011 ? Top layer layout [3]: 9 S011 ? With 50 Ohm impedance, the wider the trace width is, the larger gap between trace and reference GND will be. ? The wider the trace width is, the smaller the insertion loss will be. ? Thus, if necessary, cut out can help minimize insertion loss. 10 S011 ? But cut out occupies more PCB space. ? Besides, according to the calculation, the parasitic capacitance increases with cut out. ? Thus, cut out is a compromise. 3.7 mil 9.5 mil 2.2 mil 5.2 mil Lengt 11 S011 ? Keep VDD_PA1, VDD_PA2 and VDD_2G as wide trace as possible to avoid IR drop. ? Minimum 6 micro vias to next layers for VDD_PA1, VDD_PA2 and VDD_2G, 2 micro vias for VDD_VBATT. This can help avoid IR drop as well. ? DC supply layer 7 - Make sure you have sufficient amount of GND vias for heat dissipation from PA and for GND currents[3]. 12 S011 13 AFEM-9040 vs. S011 MB P