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2002Update_Modeling
2002 Update Tables 143
THE INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS: 2002 UPDATE
MODELING AND SIMULATION
Table 102 Modeling and Simulation Difficult Challenges [Update]
Difficult Challenges ≥ 65 nm, Through
2007
Summary Of Issues
High-frequency Circuit Modeling
(5 GHz )
? Efficient simulation of full-chip interconnect delay
? Accurate 3D interconnect model; inductance, transmission line models
? High frequency circuit models including non-quasi-static, substrate noise and coupling
? Parameter extraction without RF measurements
Was Modeling of Ultra Shallow Dopant
Distributions, Junctions, and
Silicidation
? Dopant models and parameters (damage, high- concentration, activation, metastable effects, diffusion,
interface and silicide effects)
? Characterization tools for these ultra shallow geometries and dopant levels
Is Modeling of Ultra Shallow Dopant
Distributions (Junctions,
Activation), and Silicidation
? Dopant models and parameters (damage, high- concentration, activation, metastable effects,
diffusion, interface and silicide effects) in Si_based substrate, i.e. Si, SiGe:C (incl. strain),
SOI and ultra-thin body devices
? Characterization tools for these ultra shallow geometries and dopant levels
Was Modeling Deposition and Etch
Variations, Feature Variations across a
Wafer
? Fundamental physical data (e.g., rate constants, cross sections, surface chemistry); reduced models for
complex chemistry
? Linked equipment / feature models
? CMP ( full wafer and chip level, pattern dependent effects)
? Next generation equipment/wafer models
Is Modeling Deposition and Etch
Rate Variations, Feature Geometry
Variations across a Wafer
? Fundamental physical data (e.g., rate constants, cross sections, surface chemistry); reaction
mechanisms and reduced models for complex chemistry
? Linked equipment / feature scale models
? CMP ( full wafer and chip level, pattern dependent effects)
? MOCVD, PECVD and ALD modeling
?
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