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Identification of grain boundary contours at atomic scale.pdf

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Identification of grain boundary contours at atomic scale

Identification of grain boundary contours at atomic scale Benjamin Berkels1, Andreas Ra?tz2, Martin Rumpf1, and Axel Voigt2 1 Institut fu?r Numerische Simulation, Rheinische Friedrich-Wilhelms-Universita?t Bonn, Nussallee 15, 53115 Bonn, Germany {benjamin.berkels, matrin.rumpf}@ins.uni-bonn.de, WWW home page: http://numod.ins.uni-bonn.de/ 2 Crystal Growth Group, Research Center caesar Ludwig-Erhard-Allee 2, 53175 Bonn, Germany Abstract. Nowadays image acquisition in materials science allows the resolution of grains at atomic scale. Grains are material regions with dif- ferent lattice orientation which are typically not in equilibrium. At the same time, new microscopic simulation tools allow to study the dynamics of such grain structures. Single atoms are resolved in the experimental and in the simulation results. A qualitative study of experimental images and simulation results and the comparison of simulation and experiment requires the robust and reliable extraction of mesoscopic properties from these microscopic data sets. Based on a Mumford–Shah type functional, grain boundaries are described as free discontinuity sets at which the orientation parameter for the lattice jumps. The lattice structure itself is encoded in a suitable integrand depending on the local lattice ori- entation. In addition the approach incorporates solid–liquid interfaces. The resulting Mumford–Shah functional is approximated with a level set active contour model following the approach by Chan and Vese. The im- plementation is based on a finite element discretization in space and a step size controlled gradient descent algorithm. AMS Subject Classifications (2000): 65M60, 68U10, 74E15 1 Introduction The goal of this paper is to present a method for joint segmentation and orien- tation classification in materials science. For many problems in materials science on an atomic microscale, it is essential to link the underlying atomic structure to the material properties (electrical, optical, me