PEALD沉积温度对AlN的结构和表面特性的影响.pdfVIP

第 45 卷第 4 期 红外与激光工程 2016 年 4 月 Vol.45 No.4 Infrared and Laser Engineering Apr. 2016 Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition Chen Fang1, Fang Xuan1, Wang Shuangpeng2, Niu Shouzhu1, Fang Fang3, Fang Dan1, Tang Jilong1, Wang Xiaohua1, Liu Guojun1, Wei Zhipeng1 (1. State Key Laboratory of High Power Semiconductor Lasers, School of Science, and School of Photoelectric Engineering, Changchun University of Science and Technology, Changchun 130022, China; 2. National Key Laboratory of Optical and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022, China; 3. National Institute Silicon of LED on Si Substrate, Nanchang University, Nanchang 330047, China) Abstract: The influence of growth temperature on the properties of aluminum nitride (AlN) films are grown by plasma enhanced atomic layer deposition (PEALD) at different deposition temperature. NH3 and trimethylaluminum (TMA) were used as precursors, 200, 500, 800, 1 000, 1 500 cycles AlN layers were deposited at 300 ℃ , 350 ℃ and 370 ℃ , the growth rate, crystallinity and surface roughness were discussed. Deposition rate and crystallization of the films increased whereas the surface roughness decreased in the growth temperature range of 300-370 ℃. Key words: Aluminum nitride; plasma enhanced atomic layer deposition; growth rate; crystallization; surface roughness; deposition temperature CLC number: O472+.1 Document code: A DOI： 10.3788/IRLA201645.0421001 PEALD 沉积温度对 AlN 的结构和表面特性的影响 陈 芳 1，方 铉 1，王双鹏 2，牛守柱 1，