采用二甲基肼为氮源进行GaNAs的金属有机化学气相沉积生长.pdfVIP

第 卷第 期 半 导 体 学 报 23 6 Vol. 23, No. 6 年 月 2002 6 C~INESE JOURNAL OF SEMICONDUCTORS June, 2002 ================================================================= Metalorganic Chemical Vapor Deposition of gaNAs Alloy using Dimethylhydrazine as Nitrogen precursor Wei Xin, Ma Xiaoyu, Wang Guohong, Zhang Guangze, Zhu Xiaopeng and Chen Lianghui ( Nctzonc engznee1zng Resec1ch Cente1 fo1 Optoe ect1onzc deUzces, 1nstztute of Semzconducto1s, The Chznese accdemy of Sczences, Bezjzng 100083, ChzncD Abstract: GaNAs alloy is grown by metalorganic chemical vapor deposition ( MOCVDD using dimethylhydrazine ( DM~yD as the nitrogen precursor. ~igh-resolution X-ray diffraction ( ~RXRDD and secondary ion mass spectro- metry ( SIMSD are combined in determining the nitrogen contents in the samples. Room temperature photoluminescence ( RTPLD measurement is also used in characterizing. The influence of different Ga precursors on GaNAs Cuality is investigated. Samples grown with triethylgallium ( TEGaD have better Cualities and less impurity contamination than those with trimethylgallium ( TMGaD . Nitrogen content of 5. 688% is achieved with TEGa. The peak wavelength in RTPL measurement is measured to be 1278. 5nm. Key words: GaNAsG MOCVDG impurityG contaminationG ~RXRDG SIMS EEACC: 0520FG 2530CG 4320J CLC number: TN304. 2+ 6 Document code: A Article 1D: 0253-4177( 2002D 06-0565-06 Ga ( In D NAs has been successfully grown by I 1ntroduction metalorganic chemical vapor deposition