光电半导体材料科学与技术.ppt

After 3 cycles Each pair of gas pulses (one cycle) produces exactly one monolayer of film, the thickness of the resulting film may be precisely controlled by the number of deposition cycles. Main types of ALD reactors Closed system chambers (most common) The reaction chamber walls are designed to effect the transport of the precursors. Schematic of a closed ALD system Ref: Technology Backgrounder: Atomic Layer Deposition, IC Knowledge LLC, 24 April 06. /misc_technology/Atomic%20Layer%20Deposition%20Briefing.pdf. Process Temperature [1] The Verano 5500? A 300-mm ALD system by Aviza Technology, Inc. [1] [1] 1 Technology Backgrounder: Atomic Layer Deposition, IC Knowledge LLC, 24 April 06. /misc_technology/Atomic%20Layer%20Deposition%20Briefing.pdf One cycle Candidates for High-K dielectrics Film Precursors Al2O3 Al(CH)3, H2O or O3 HfO2 HfCl4 or TEMAH, H2O ZrO2 ZrCl4, H2O ALD Applications High-K dielectrics for CMOS Reduces leakage current Faster switching speed Cooler transistors Ref: Intels High-k/Metal Gate Announcement, Intel? Corporation. 26 April, 06. /technology/silicon/micron.htm#high. Semiconductor memory (DRAM) Cu interconnect barrier Deposition in porous structures Advantages Stoichiometric films with large area uniformity and 3D conformality. Precise thickness control. Low temperature deposition possible. Gentle deposition process for sensitive substrates. Disadvantages Deposition Rate slower than CVD. Number of different material that can be deposited is fair compared to MBE. Summary of ALD * * 光电半导体材料科学与技术 光电半导体材料科学与技术 NTHU, Chien-Neng Liao NTHU, Chien-Neng Liao 电子束蒸发源的优点 电子束轰击热源的束流密度高，能获得远比电阻加热源更大的能量密度 。达到104～ 109 W/cm2 的功率密度，可用于蒸发高熔点材料，如W、 Mo等。 被蒸发材料可置于水冷坩锅中 →避免容器材料蒸发、及 其与蒸发材料反应 热量可直接加到蒸镀 材料的表面→ 热效率高、热传导和热辐射损失小 电子束蒸发源的缺点 电子枪发出的一次电子和蒸发材料发出的二次电子会使 ．蒸发原子和残余气体分子电离 → 影响膜层质量。可选择电子枪加以解决 ．电子束蒸镀装置结构复杂、价格昂贵 ． ．加速电压高时，产生辐射伤害 直流溅射 ( 导电靶材 ) 射频溅射 ( 绝缘介质靶材 ) 反应溅射 (氧化物、氮化物靶材 ) 磁控溅射系统 溅射的基本原理: 物质的溅射现象 溅射：荷能粒子与固体（靶材）表面相互作用过程中，发生能量和动量的转移，当表面原子获得足