大功率半导体激光光源光束整形技术研究_彭航宇.pdfVIP

38 　2 　　　 Vol.38, No.2 2011 2 CHINESEJOURNAL OF LASERS February, 2011 　　 大功率半导体激光光源光束整形技术研究 1, 2 1, 2 1 1 1, 2 1, 2 彭航宇 　顾媛媛 　单肖楠 　刘　云 　郝明明 　朱洪波 1 1, 2 1 1 1 尹红贺 　田振华 　秦　莉 　宁永强 　王立军 1 , 130033 2 , 100049) 　, 。 , , , 。 60 W, 57%880 nm bar , 20 , 1183 W, , 1 kW, -45.8%, 79.3 mm ·mrad×81.2 mm ·mrad。、。 　;;; 　TN248.4　　　　A 　　　doi:10.3788/CJL201138.0202010 Study on B eam Shaping of High Power Diode L asers 1, 2 1, 2 1 1 1, 2 Peng Hangyu 　GuYuanyuan 　ShanXiaonan 　LiuYun 　HaoMing ing 1, 2 1 1, 2 1 1 1 Zhu Hongbo 　Yin Honghe 　Tian Zhenhua 　Qin Li 　Ning Yongqiang 　Wang Lijun 1Key Laboratory of Excited S tate Physics, Changchun Insti tu te of Op tics, Fin e M echan ics an d P hysics, Chin ese A cademy of Scien ces, Changchun , Ji in 130033, China 2 Gradu ate Univ ersity of Chinese A cademy of S ciences, B eij ing 100049, China Abstract　The ajor drawbackof high power diodelaser syste sistheir poor bea quality, which canbe i proved by bea shaping andbea co bination.Withthehighwall-plug efficiency, high power laser diode developedrapidly. Base on bars rated to 60 W and 57% conversion efficiency, vertically stacked arrays (twenty bars)of such configurationare de onstrated withrated to 1183 W.The bea quality of high-power highbrightness 880 n laser diode source is i proved with bea shaping.Bea para eter product of 79.3 · rad× 81.2 · rad, electro-optical conversionefficiency of ore than 45.8%