Characterization and Modeling of DHBT in InPGaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator英文文献资料.docVIP

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Characterization and Modeling of DHBT in InPGaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator英文文献资料.doc

Characterization and Modeling of DHBT in InPGaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator英文文献资料

HindawiPublishingCorporation ActiveandPassiveElectronicComponents Volume2012,ArticleID796973,15pages doi:10.1155/2012/796973 ResearchArticle CharacterizationandModelingofDHBTin InP/GaAsSbTechnologyfortheDesignandFabricationof aKaBandMMICOscillator S.Laurent, J.C.Nallatamby, M.Prigent, M.Riet, andV.Nodjiadjim 1 1 1 2 2 1 XLIM-HighFrequencyComponents,Circuits,SignalsandSystemDepartment(C2S2),Universit′edeLimoges,7rueJulesVall′es, 19100Brive,France III–VLab,JointLabbetweenBellLabs,TRTandCEA/Leti,RoutedeNozay,91460Marcoussis,France 2 Corres

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Characterization and Modeling of DHBT in InPGaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator英文文献资料.docVIP