Quantum Conductance Staircase of Edge Hole Channels in Silicon Quantum Wells 外文参考文献.docVIP

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Quantum Conductance Staircase of Edge Hole Channels in Silicon Quantum Wells 外文参考文献.doc

Quantum Conductance Staircase of Edge Hole Channels in Silicon Quantum Wells 外文参考文献

Journal of Modern Physics, 2012, 3, 1771-1775 /10.4236/jmp.2012.311220 Published Online November 2012 (http://www.SciRP.org/journal/jmp) Quantum Conductance Staircase of Edge Hole Channels in Silicon Quantum Wells Nikolay T. Bagraev, Leonid E. Klyachkin, Andrei A. Kudryavtsev, Anna M. Malyarenko Ioffe Physical Technical Institute, St. Petersburg, Russia Email: impurity.dipole@mail.ioffe.ru Received September 15, 2012; revised October 12, 2012; accepted October 19, 2012 ABSTRACT We present the findings for the quantum conductance staircase of holes that is caused by the edge channels i

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