拉扎维模拟集成电路精讲第一讲mos器件特性.ppt

栅极电阻 MOS 低频小信号模型 完整的MOS小信号模型 MOS SPICE模型 在电路模拟（simulation）中，SPICE要求每个器件都有一个精确的模型。 种类 1st 代：MOS1，MOS2，MOS3； 2nd代：BSIM，HSPICE level＝28，BSIM2 3rd代：BSIM3，MOS model9，EKV(Enz-Krummenacher-Vittoz) 目前工艺厂家最常提供的MOS SPICE模型为BSIM3v3 （UC Berkeley） 仿真器： HSPICE；SPECTRE；PSPICE 用简单的模型设计（design），用复杂的模型验证（verification）； 模型用于： 大信号静态 (dc variables) 小信号静态 (gains, resistances) 小信号动态 (frequency response, noise) 大信号动态 计算机模型（spice model）用于计算机验证，而非用于设计 NMOS器件的电容--电压特性 积累区 强反型 本章基本要求 掌握MOSFET电流公式及跨导公式。 掌握MOSFET的二阶效应。 掌握MOSFET小信号等效电路。 * 假定漏极电压0，由于沟道电势从源极的0V变化到漏极的VD，所以栅与沟道间的局部电压差从VG变化到VG-VD。 * Level 1 (MOS1) ? Basic square law model based on the gradual channel approximation and the square law for saturated drain current. ? Good for hand analysis. ? Needs improvement for deep-submicron technology (must incorporate the square law to linear shift) Level 2 (MOS2) ? First attempt to include small geometry effects ? Inclusion of the channel-bulk depletion charge results in the familiar 3/2 power terms ? Introduced a simple subthreshold model which was not continuous with the strong inversion model. ? Model became quite complicated and probably is best known as a “developing ground” for better modeling techniques. Level 3 (MOS3) ? Used to overcome the limitations of Level 2. Made use of a semi-empirical approach. ? Added DIBL and the reduction of mobility by the lateral field. ? Similar to Level 2 but considerably more efficient. ? Used binning but was poorly implemented. BSIM (Berkeley Short-Channel IGFET Model) ? Emphasis is on mathematical conditioning for circuit simulation ? Short channel models are mostly empirical and shifts the modeling to the parameter extraction capability ? Introduced a more detailed subthreshold current model with good continuity ? Poor modeling of channel conductance HSPICE Level 28 ? Based on BSIM but has been extensively modified. ? More suitable for analog circuit design ? Uses model binning ? Model parameter set is almost entirely empirical ? User is locked into