AZ91D复合材料真空压力浸渗制备工艺及微观组织的研究.pdfVIP

维普资讯 学兔兔 May 2008 铸 造 VO1．57 NO．5 FOUNDRY ·461· SiCp／AZ91 D复合材料真空压力浸渗制备工艺 及微观组织的研究 刘文娜，余 欢，徐志锋，汪志太，胡关忠，蔡长春 (南昌航空大学材料科学与工程学院，江西南昌330063) 摘要：采用真空压力浸渗装置制备SiC。／AZ91D复合材料。对制备工艺进行了改进，提出了以SiC颗粒覆盖法保护镁合 金熔体的措施，可以有效解决熔剂覆盖法易造成的熔剂夹杂问题；在压力0．4 MPa、浸渗温度700℃、保压5 min的条件 下，制备SiC单一颗粒尺寸为5 m、体积分数为44．7％的SiC。／Mg复合材料；并且成功制备32／．Lrn SiC单一颗粒体积分数 为56．4％的SiC ／AZ91D复合材料。经过光镜、扫描电镜和x射线衍射仪分析表明，采用sic颗粒覆盖法制备sic。／AZ91D 复合材料组织致密、无明显孔洞及夹杂等铸造缺陷，有新相Mg2Si生成。 关键词：真空压力浸渗；SiC。／AZ91D复合材料；制备工艺 中图分类号：TG146．2 文献标识码：A 文章编号：1001—4977(2008)05—0461—05 Microstructures and Fabricating Process of SiCp／AZ91 D Composites by Vacuum Pressure Infiltration LI U Wen—na，YU Huan，XU Zhi—feng，WANG Zhi—tai，HU Mei—zhong，CAI Chang—chun (Department of Mater．Sci．and Eng．，Nangchang Hangkong University，Nanchang 330063 Jiangxi，China) Abstract：SiCD，AZ9 1 D com posites were fabricated by vacuum pressure infiltration process，in which the SiC particles coverage method was used to protect magnesium alloy melt。and through the method．the flux inclusions easily occurred in the flux coverage process could be removed．The preform with single SiC particle size of 5 pm and volume fraction of 44．7％ and even with size of 32 pm and volume fraction of 56．4％was successfuIly infiltrated under the pressure of 0．4 MPa．holding time of 5 min and infiltration temperature of 700。C．The analysis results by means of OM．SEM and XRD indicated that SiC particles are uniformIv distributed in the magnesium matrix without casting defects su