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整流桥UA80 ASEMI 1A 800V
SMT Bridges
General Purpose Rectifiers
OUTLINE DIMENSIONS
Case:SOP-4
Unit:mm
UA80
800V 1A
RATINGS
●Absolute Maximum Ratings (Ifnotspecified Tc=25℃)
Item SymbolConditions Ratings Unit
Storage Temperature Tstg -55～150 ℃
Operating Junction Temperature Tj150 ℃
M aximum Reverse Voltage VRM 800 V
Average Rectified Forward Current IO 50Hz sine wave,R-load,Ta=25℃ 1 A
Peak Surge Forward Current IFSM 50Hz sine wave,Non-repetitive 1 cycle peak value,Tj=25 ℃ 30 A
CurrentSquared Time It 1ms≦t＜10msTj=25 ℃ 3 A2s
●ElectricalCharacteristics (Ifnotspecified Tc=25℃)
Item SymbolConditions Ratings Unit
Forward Voltage VF IF=0.4A, Pulse measurement,Rating ofperdiode M ax.0.95 V
Reverse Current IR VR=800v, Pulse measurement,Rating ofperdiode M ax.10 μA
ThermalResistance θjljunction tolead Withoutheatsink M ax.25 ℃/W
θja junction to ambient W ithoutheatsink M ax.62.5
UA80
Forward Voltage
10
Tl=150°C [TYP]
Tl=25°C [TYP]
1
Pulse measurement per diode
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Forward Voltage VF [V]
UA80 Forward Power Dissipation
SIN
2
1
0
0 0.2 0.4 0.6 0.8 1 1.2
Average Rectified Forward Current IO [A]
Tj = 150°C
Sine wave
UA80 Derating Curve
Alumina substrate
1 SIN mm2
Soldering land 1mmf
Conductor layer 20mm
Substrate thickness 0.64mm
0
0 20 40 60 80 100 120 140 160
Ambient Temperature Ta [°C]
VR = VRM IO 0
0
VR
tp
D=tp/T
T
UA80 Derating Curve
SIN
1
0
0 20 40 60 80 100 120 140 160
Lead Temperature Tl [°C]
VR = VRM IO 0
0
VR
tp
D=tp/T
T
UA80
Peak Surge Forward Capability
40
10ms 10ms
35
1 cycle
30 non-repetitive,
sine wave,
Tj=25°C before
surge current is applied 25
20
15
10
5
0
1 2 5 10 20 50 100
Number of Cycles [cycles]
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