单层MoS2(1x)Se2x合金材料中硒原子的晶界择优掺杂-物理化学学报.PDF

物理化学学报(Wuli Huaxue Xuebao) Month Acta Phys. -Chim. Sin. 2017, 33 (X), 0001−0009 0001 [Communication] doi: 10.3866/PKU.WHXB201705123 单层MoS2(1−x)Se2x 合金材料中硒原子的晶界择优掺杂和富集 * 吕丹辉 朱丹诚 金传洪 (浙江大学材料科学与工程学院，硅材料国家重点实验室，杭州 310027) 摘要：采用球差校正扫描透射电子显微镜(STEM)研究化学气相沉积法制备的二维 MoS2( 1−x)Se2x 合金材 料中Se 元素掺杂、取代的微观过程和机理。定量和统计STEM 表征结果发现：Se 原子晶界处富集显著， 晶界处Se 元素含量远高于晶畴内部。进一步研究表明晶界中掺杂取代Se 原子的浓度和分布与晶界结构 密切相关。主要与晶界处的局域畸变及其诱导的反应活性有关。该结果对于二维过渡金属硫族化物合金 体系的可控合成及应用拓展具有重要意义。 关键词：MoS2(1−x)Se2x 合金；晶界富集；原子分辨扫描透射电子显微镜 中图分类号：O641 Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS2(1−x)Se2x Alloy LÜ Dan-Hui ZHU Dan-Cheng JIN Chuan-Hong* (State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China ) Abstract: We report a microscopic study on the process for the substitution of selenium into monolayer molybdenum disulfide via a joint CVD-STEM characterization. Results from quantitative and statistic STEM reveal that the concentration of Se atoms in grain boundaries is much higher than that in intra-domains of monolayer MoS2( 1−x)Se2x alloy. In-depth analysis finds that Se atoms are enriched in the distorted regions due to presence of dislocation cores on the grain boundary, which can be further understood by considering the difference of chemical reactivity fo